5G: CMOS Low Noise Amplifier Design

Abstract

The low-noise amplifier (LNA) is a vital component in wireless receiver systems, as it amplifies extremely weak signals received from the antenna while adding minimal noise and distortion. In this work, a CMOS-based LNA with an intended operating frequency of 26 GHz is designed for 5G millimeter-wave applications. Because of its small size, low power consumption, and suitability for large-scale integration, CMOS technology was chosen. To ensure dependable operation, the design must overcome obstacles like parasitic effects, device noise, and stability problems at such high frequencies through careful transistor sizing, bias optimization, and the application of matching and stabilization techniques. Advanced Design System (ADS) software is used to design and simulate the circuit, allowing for precise RF modeling and S-parameter evaluation. The LNA achieves a forward gain (S21) of 11.16 dB at 26 GHz, indicating effective signal amplification at the target frequency, according to measurement and simulation results. Optimal reflection coefficient values of S11 = 58.558 – j41.767 and S22 = 78.449 – j44.026 are obtained by implementing input and output impedance matching networks to reduce reflections and maximize power transfer. The findings verify that the suggested CMOS LNA is appropriate for front-end 5G receiver applications and offers a solid foundation for additional performance improvement in subsequent designs.

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